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- 🌟 Photo Sharing Tips: How to Stand Out and Win?
1.Highlight Gate Elements: Include Gate logo, app screens, merchandise or event collab products.
2.Keep it Clear: Use bright, focused photos with simple backgrounds. Show Gate moments in daily life, travel, sports, etc.
3.Add Creative Flair: Creative shots, vlogs, hand-drawn art, or DIY works will stand out! Try a special [You and Gate] pose.
4.Share Your Story: Sincere captions about your memories, growth, or wishes with Gate add an extra touch and impress the judges.
5.Share on Multiple Platforms: Posting on Twitter (X) boosts your exposure an
- 🎉 [Gate 30 Million Milestone] Share Your Gate Moment & Win Exclusive Gifts!
Gate has surpassed 30M users worldwide — not just a number, but a journey we've built together.
Remember the thrill of opening your first account, or the Gate merch that’s been part of your daily life?
📸 Join the #MyGateMoment# campaign!
Share your story on Gate Square, and embrace the next 30 million together!
✅ How to Participate:
1️⃣ Post a photo or video with Gate elements
2️⃣ Add #MyGateMoment# and share your story, wishes, or thoughts
3️⃣ Share your post on Twitter (X) — top 10 views will get extra rewards!
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The performance of 4-inch VB method gallium oxide substrate of Fujia Gallium Industry has reached the international advanced level.
On February 20, Jinshi Data News, the reporter learned from Hangzhou Institute of Optoelectronics that Hangzhou Opto-Mechatronics Institute's incubated enterprise Hangzhou Fujia Gallium Industry has made a major breakthrough in the field of vertical Bridgman (VB) method for growing gallium oxide crystals. The tested single crystal quality has reached the international advanced level, and now it is synchronously launching crystal growth equipment and process packages to the market. Test results show that the 4-inch VB crystal grown using Fujia Gallium equipment has no twinning inside, the single crystal substrate XRD full width at half maximum (FWHM) is better than 50arcsec, comparable to the quality of gallium oxide single crystal substrates prepared by the Czochralski method, and the performance has reached the international advanced level.